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SCT4018KW7TL - Product dimension image

SCT4018KW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 75 A, 1.2 KV, 0.018 OHM, TO-263

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Search across all available documentation for this part.

DocumentsJudgment Criteria of Thermal EvaluationMethod for Monitoring Switching Waveform+47
SCT4018KW7TL - Product dimension image

SCT4018KW7TL

Active
Rohm Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 75 A, 1.2 KV, 0.018 OHM, TO-263

Deep-Dive with AI

DocumentsJudgment Criteria of Thermal EvaluationMethod for Monitoring Switching Waveform+47

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4018KW7TL
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]170 nC
Input Capacitance (Ciss) (Max) @ Vds4532 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]267 W
Rds On (Max) @ Id, Vgs23.4 mOhm
Supplier Device PackageTO-263-7L
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 36.95
10$ 32.83
100$ 28.72
Digi-Reel® 1$ 36.95
10$ 32.83
100$ 28.72
Tape & Reel (TR) 1000$ 23.69
NewarkEach (Supplied on Cut Tape) 1$ 37.39
10$ 27.73
25$ 26.70
50$ 25.68
100$ 24.65
250$ 24.65
500$ 24.64
1000$ 24.64

Description

General part information

SCT4018KW7 Series

SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

Judgment Criteria of Thermal Evaluation

Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Improvement of switching loss by driver source

Technical Article

What Is Thermal Design

Thermal Design

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Compliance of the ELV directive

Environmental Data

TO-263-7L Package Dimensions

Package Information

Condition of Soldering

Package Information

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Types and Features of Transistors

Application Note

Anti-Whisker formation

Package Information

PCB Layout Thermal Design Guide

Thermal Design

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

How to Use PLECS Models

Technical Article

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Application Benefits of Using 4<sup>th</sup> Generation SiC MOSFETs

Technical Article

About Export Administration Regulations (EAR)

Export Information

Moisture Sensitivity Level

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

TO-263-7L Explanation for Marking

Package Information

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

How to Use LTspice&reg; Models: Tips for Improving Convergence

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

TO-263-7L Inner Structure

Package Information

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

About Flammability of Materials

Environmental Data

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Two-Resistor Model for Thermal Simulation

Thermal Design

4 Steps for Successful Thermal Designing of Power Devices

White Paper

SiC MOSFET Layout Design Considerations

Technical Article