SCT4018KW7 Series

1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Rohm Semiconductor SCT4018KW7TL	TO-263-7L	75 A	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	175 °C	N-Channel	-4 V	21 V	267 W	23.4 mOhm	4532 pF	18 V	170 nC	4.8 V	1200 V

Catalog

1200V, 75A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT4018KW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.