TK8A45D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 8A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 8A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK8A45D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Operating Temperature	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK8A45D(STA4,Q,M)	Through Hole	450 V	TO-220SIS	TO-220-3 Full Pack	35 W	900 mOhm	30 V	150 °C	N-Channel	MOSFET (Metal Oxide)	10 V	700 pF	8 A	4.4 V	16 nC

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General part information

N-Channel 450 V 8A (Ta) 35W (Tc) Through Hole TO-220SIS

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