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MOSFET N-CH 450V 8A TO220SIS
| Part | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Operating Temperature | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 450 V | TO-220SIS | TO-220-3 Full Pack | 35 W | 900 mOhm | 30 V | 150 °C | N-Channel | MOSFET (Metal Oxide) | 10 V | 700 pF | 8 A | 4.4 V | 16 nC |