2SK2993(TE24L,Q)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2993(TE24L,Q)

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	TO-220SM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage 2SK2993(TE24L,Q)	150 °C	20 V	10 V	100 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	Surface Mount	3.5 V	250 V	TO-220SM	105 mOhm	100 nC	20 A	MOSFET (Metal Oxide)	4000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 20A (Ta) 100W (Tc) Surface Mount TO-220SM

Technical documentation and resources