MOSFET N-CH 250V 20A TO220SM
| Part | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Package / Case | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 20 V | 10 V | 100 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | Surface Mount | 3.5 V | 250 V | TO-220SM | 105 mOhm | 100 nC | 20 A | MOSFET (Metal Oxide) | 4000 pF |