2SD1898T100R

NRND

Rohm Semiconductor

TRANS GP BJT NPN 80V 1A 4-PIN(3+TAB) MPT T/R

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NRND

Rohm Semiconductor

TRANS GP BJT NPN 80V 1A 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1898T100R

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]
Rohm Semiconductor 2SD1898T100Q	400 mV	TO-243AA	Surface Mount	1 A	150 °C	120	NPN	1 µA	100 MHz	80 V	2 W
Rohm Semiconductor 2SD1898T100R	400 mV	TO-243AA	Surface Mount	1 A	150 °C	180 hFE	NPN	1 µA	100 MHz	80 V	2 W
Rohm Semiconductor 2SD1898T100P	400 mV	TO-243AA	Surface Mount	1 A	150 °C	82	NPN	1 µA	100 MHz	80 V	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Suitable for Middle Power Driver

Complementary PNP Types : 2SB1260 / 2SB1181

Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)

Technical documentation and resources

No documents available