2SD1898T100Q

NRND

Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 500 MA, 500 MW, SOT-89, SURFACE MOUNT

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NRND

Rohm Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 80 V, 500 MA, 500 MW, SOT-89, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1898T100Q

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]
Rohm Semiconductor 2SD1898T100Q	400 mV	TO-243AA	Surface Mount	1 A	150 °C	120	NPN	1 µA	100 MHz	80 V	2 W
Rohm Semiconductor 2SD1898T100R	400 mV	TO-243AA	Surface Mount	1 A	150 °C	180 hFE	NPN	1 µA	100 MHz	80 V	2 W
Rohm Semiconductor 2SD1898T100P	400 mV	TO-243AA	Surface Mount	1 A	150 °C	82	NPN	1 µA	100 MHz	80 V	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources

No documents available