BYG21MHR3G

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 1KV 1.5A DO214AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE AVALANCHE 1KV 1.5A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYG21MHR3G

Capacitance @ Vr, F	13 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	120 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation BYG21MH	Surface Mount	150 °C	-55 °C	1.6 V	DO-214AC SMA	120 ns	200 mA 500 ns	1000 V	13 pF	DO-214AC (SMA)	1 µA	Avalanche	1.5 A
Taiwan Semiconductor Corporation BYG21MHR3G	Surface Mount	150 °C	-55 °C	1.6 V	DO-214AC SMA	120 ns	200 mA 500 ns	1000 V	13 pF	DO-214AC (SMA)	1 µA	Avalanche	1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available