BYG21MH

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 1.5A DO214AC

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Taiwan Semiconductor Corporation

DIODE AVALANCHE 1.5A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYG21MH

Capacitance @ Vr, F	13 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	120 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation BYG21MH	Surface Mount	150 °C	-55 °C	1.6 V	DO-214AC SMA	120 ns	200 mA 500 ns	1000 V	13 pF	DO-214AC (SMA)	1 µA	Avalanche	1.5 A
Taiwan Semiconductor Corporation BYG21MHR3G	Surface Mount	150 °C	-55 °C	1.6 V	DO-214AC SMA	120 ns	200 mA 500 ns	1000 V	13 pF	DO-214AC (SMA)	1 µA	Avalanche	1.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)

Technical documentation and resources