MBR30035CTL

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 150A 2TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 150A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR30035CTL

Current - Average Rectified (Io) (per Diode)	150 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	600 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Diode Configuration	Technology	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MBR30035CTR	35 V	Twin Tower	1 Pair Common Anode	Reverse Polarity Schottky	150 A	150 °C	-55 °C	Twin Tower	200 mA 500 ns	Chassis Mount	1 mA
GeneSiC Semiconductor MBR30035CTL	35 V	Twin Tower	1 Pair Common Cathode	Schottky	150 A	150 °C	-55 °C	Twin Tower	200 mA 500 ns	Chassis Mount	3 mA	600 mV
GeneSiC Semiconductor MBR30035CT	35 V	Twin Tower	1 Pair Common Cathode	Schottky	150 A	150 °C	-55 °C	Twin Tower	200 mA 500 ns	Chassis Mount	8 mA		650 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 35 V 150A Chassis Mount Twin Tower

Technical documentation and resources

No documents available