DIODE MOD SCHOTT 35V 150A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Diode Configuration | Technology | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 35 V | Twin Tower | 1 Pair Common Anode | Reverse Polarity Schottky | 150 A | 150 °C | -55 °C | Twin Tower | 200 mA 500 ns | Chassis Mount | 1 mA | ||
GeneSiC Semiconductor | 35 V | Twin Tower | 1 Pair Common Cathode | Schottky | 150 A | 150 °C | -55 °C | Twin Tower | 200 mA 500 ns | Chassis Mount | 3 mA | 600 mV | |
GeneSiC Semiconductor | 35 V | Twin Tower | 1 Pair Common Cathode | Schottky | 150 A | 150 °C | -55 °C | Twin Tower | 200 mA 500 ns | Chassis Mount | 8 mA | 650 mV |