SCT2120AFC

Obsolete

Rohm Semiconductor

SICFET N-CH 650V 29A TO220AB

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Obsolete

Rohm Semiconductor

SICFET N-CH 650V 29A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SCT2120AFC

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	61 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	165 W
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	TO-220AB
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-6 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Rohm Semiconductor SCT2120AFC	Through Hole	156 mOhm	650 V	1200 pF	TO-220-3	175 °C	18 V	N-Channel	4 V	29 A	-6 V	22 V	165 W	61 nC	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 29A (Tc) 165W (Tc) Through Hole TO-220AB

Technical documentation and resources