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SICFET N-CH 650V 29A TO220AB
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Min] | Vgs (Max) [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | Through Hole | 156 mOhm | 650 V | 1200 pF | TO-220-3 | 175 °C | 18 V | N-Channel | 4 V | 29 A | -6 V | 22 V | 165 W | 61 nC | TO-220AB |