CDM4-650 TR13 PBFREE

Obsolete

Central Semiconductor Corp

MOSFET N-CH 650V 4A DPAK

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Obsolete

Central Semiconductor Corp

MOSFET N-CH 650V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CDM4-650 TR13 PBFREE

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.4 nC
Input Capacitance (Ciss) (Max) @ Vds	463 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	77 W, 620 mW
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs (Max) [Max]
Central Semiconductor Corp CDM4-650 TR13 PBFREE	2.7 Ohm	-55 °C	150 °C	650 V	11.4 nC	Surface Mount	N-Channel	77 W 620 mW	DPAK	4 V	463 pF	10 V	4 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V

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General part information

N-Channel 650 V 4A (Ta) 620mW (Ta), 77W (Tc) Surface Mount DPAK

Technical documentation and resources

No documents available