Beta
⌘K
MOSFET N-CH 650V 4A DPAK
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | FET Type | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Central Semiconductor Corp | 2.7 Ohm | -55 °C | 150 °C | 650 V | 11.4 nC | Surface Mount | N-Channel | 77 W 620 mW | DPAK | 4 V | 463 pF | 10 V | 4 A | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 30 V |