WNSC12650T6J

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARBIDE 650V 12A 5DFN

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Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARBIDE 650V 12A 5DFN

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC12650T6J

Capacitance @ Vr, F	328 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	4-VSFN Exposed Pad
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	5-DFN (8x8)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors Co., Ltd WNSC10650WQ	TO-247-2	1.7 V	328 pF	650 V	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors Co., Ltd WNSC12650WQ	TO-247-2		328 pF	650 V	Through Hole	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors Co., Ltd WNSC12650T6J	5-DFN (8x8)		328 pF	650 V	Surface Mount	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	4-VSFN Exposed Pad	60 µA	175 °C	1.8 V
WeEn Semiconductors Co., Ltd WNSC16650CWQ	TO-247-3	1.7 V		650 V	Through Hole		SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	50 µA	175 °C		1 Pair Common Cathode	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 12A Surface Mount 5-DFN (8x8)

Technical documentation and resources

No documents available