WNSC1 Series

Catalog

DIODE SIL CARB 650V 10A TO247-2

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors Co., Ltd WNSC10650WQ	TO-247-2	1.7 V	328 pF	650 V	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors Co., Ltd WNSC12650WQ	TO-247-2		328 pF	650 V	Through Hole	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors Co., Ltd WNSC12650T6J	5-DFN (8x8)		328 pF	650 V	Surface Mount	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	4-VSFN Exposed Pad	60 µA	175 °C	1.8 V
WeEn Semiconductors Co., Ltd WNSC16650CWQ	TO-247-3	1.7 V		650 V	Through Hole		SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	50 µA	175 °C		1 Pair Common Cathode	16 A