2SK2847(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO3PIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO3PIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2847(F)

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	2040 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-3P(N)IS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature
Toshiba Semiconductor and Storage 2SK2847(F)	MOSFET (Metal Oxide)	8 A	Through Hole	10 V	1.4 Ohm	TO-3P(N)IS	85 W	SC-65-3 TO-3P-3	58 nC	30 V	2040 pF	900 V	N-Channel	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 8A (Ta) 85W (Tc) Through Hole TO-3P(N)IS

Technical documentation and resources