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MOSFET N-CH 900V 8A TO3PIS
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 8 A | Through Hole | 10 V | 1.4 Ohm | TO-3P(N)IS | 85 W | SC-65-3 TO-3P-3 | 58 nC | 30 V | 2040 pF | 900 V | N-Channel | 150 °C |