PJT7600_R1_00001

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Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

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Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7600_R1_00001

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	700 mA
Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	1.6 nC, 2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	151 pF, 92 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	150 mOhm, 325 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJT7600_R1_00001	MOSFET (Metal Oxide)	N and P-Channel Complementary	20 V	6-TSSOP SC-88 SOT-363	92 pF 151 pF	-55 °C	150 °C	Surface Mount	700 mA	1 A	350 mW	SOT-363	1 V	1.6 nC 2.2 nC	150 mOhm 325 mOhm

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General part information

Mosfet Array 20V 1A (Ta), 700mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources