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20V COMPLEMENTARY ENHANCEMENT MO
| Part | Technology | Configuration | Drain to Source Voltage (Vdss) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | MOSFET (Metal Oxide) | N and P-Channel Complementary | 20 V | 6-TSSOP SC-88 SOT-363 | 92 pF 151 pF | -55 °C | 150 °C | Surface Mount | 700 mA | 1 A | 350 mW | SOT-363 | 1 V | 1.6 nC 2.2 nC | 150 mOhm 325 mOhm |