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2ED2106S06FXUMA1 - null

2ED2106S06FXUMA1

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Infineon Technologies

THE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)

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2ED2106S06FXUMA1 - null

2ED2106S06FXUMA1

Active
Infineon Technologies

THE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)

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Technical Specifications

Parameters and characteristics for this part

Specification2ED2106S06FXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]700 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHigh-Side and Low-Side
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]675 V
Input TypeCMOS, TTL
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]100 ns
Supplier Device PackagePG-DSO-8-69
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.36
10$ 1.22
25$ 1.16
100$ 0.95
250$ 0.89
500$ 0.78
1000$ 0.62
Digi-Reel® 1$ 1.36
10$ 1.22
25$ 1.16
100$ 0.95
250$ 0.89
500$ 0.78
1000$ 0.62
Tape & Reel (TR) 2500$ 0.51
5000$ 0.51
NewarkEach (Supplied on Cut Tape) 1$ 0.86
10$ 0.71
25$ 0.67
50$ 0.63
100$ 0.61
250$ 0.60
500$ 0.59
1000$ 0.58

Description

General part information

2ED2106 Series

650 Vhigh and low sidehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available:2ED21064S06J. Based on ourSOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources