
2ED2106S06FXUMA1
ActiveTHE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)
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2ED2106S06FXUMA1
ActiveTHE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2106S06FXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 700 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | High-Side and Low-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 675 V |
| Input Type | CMOS, TTL |
| Logic Voltage - VIL, VIH [custom] | 1.1 V |
| Logic Voltage - VIL, VIH [custom] | 1.7 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 35 ns |
| Rise / Fall Time (Typ) [custom] | 100 ns |
| Supplier Device Package | PG-DSO-8-69 |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.36 | |
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Digi-Reel® | 1 | $ 1.36 | ||
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Tape & Reel (TR) | 2500 | $ 0.51 | ||
| 5000 | $ 0.51 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.86 | |
| 10 | $ 0.71 | |||
| 25 | $ 0.67 | |||
| 50 | $ 0.63 | |||
| 100 | $ 0.61 | |||
| 250 | $ 0.60 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.58 | |||
Description
General part information
2ED2106 Series
650 Vhigh and low sidehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available:2ED21064S06J. Based on ourSOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Documents
Technical documentation and resources