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THE 2ED2106S06F IS A 650 V 0.7 A HIGH AND LOW SIDE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER (DSO-8 PACKAGE)
| Part | Channel Type | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Driven Configuration | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case | Package / Case [y] | Package / Case [x] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Supplier Device Package | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Type | Mounting Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Drivers |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Independent | 1.1 V | 1.7 V | High-Side and Low-Side | IGBT N-Channel MOSFET | 35 ns | 100 ns | 8-SOIC | 3.9 mm | 0.154 in | 700 mA | 290 mA | PG-DSO-8-69 | 675 V | -40 °C | 125 °C | CMOS TTL | Surface Mount | 20 V | 10 VDC | 2 |