
SGS23N60UFDTU
ObsoleteON Semiconductor
IGBT 600V 23A 73W TO220F
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SGS23N60UFDTU
ObsoleteON Semiconductor
IGBT 600V 23A 73W TO220F
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SGS23N60UFDTU |
|---|---|
| Current - Collector (Ic) (Max) | 23 A |
| Current - Collector Pulsed (Icm) | 92 A |
| Gate Charge | 49 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 73 W |
| Reverse Recovery Time (trr) | 60 ns |
| Supplier Device Package | TO-220F-3 |
| Switching Energy [custom] | 115 µJ |
| Switching Energy [custom] | 135 µJ |
| Td (on/off) @ 25°C | 60 ns |
| Td (on/off) @ 25°C | 17 ns |
| Test Condition | 23 Ohm, 15 V, 300 V, 12 A |
| Vce(on) (Max) @ Vge, Ic | 2.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SGS23N60UFD Series
ON Semiconductor's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Documents
Technical documentation and resources