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SGS23N60UFDTU - TO-220F

SGS23N60UFDTU

Obsolete
ON Semiconductor

IGBT 600V 23A 73W TO220F

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SGS23N60UFDTU - TO-220F

SGS23N60UFDTU

Obsolete
ON Semiconductor

IGBT 600V 23A 73W TO220F

Technical Specifications

Parameters and characteristics for this part

SpecificationSGS23N60UFDTU
Current - Collector (Ic) (Max)23 A
Current - Collector Pulsed (Icm)92 A
Gate Charge49 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]73 W
Reverse Recovery Time (trr)60 ns
Supplier Device PackageTO-220F-3
Switching Energy [custom]115 µJ
Switching Energy [custom]135 µJ
Td (on/off) @ 25°C60 ns
Td (on/off) @ 25°C17 ns
Test Condition23 Ohm, 15 V, 300 V, 12 A
Vce(on) (Max) @ Vge, Ic2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SGS23N60UFD Series

ON Semiconductor's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.