SGS23N60UFD Series

600V, PT IGBT

Catalog

600V, PT IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Switching Energy [custom]	Switching Energy [custom]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector (Ic) (Max)
ON Semiconductor SGS23N60UFDTU	12 A 15 V 23 Ohm 300 V	60 ns	17 ns	49 nC	2.6 V	73 W	600 V	Through Hole	60 ns	TO-220-3 Full Pack	115 µJ	135 µJ	92 A	-55 °C	150 °C	TO-220F-3	23 A

Catalog

600V, PT IGBT

Key Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1V @ IC= 12A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 42ns (typ.)

Description

ON Semiconductor's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.