TK20A25D,S5Q(M

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 20A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK20A25D,S5Q(M

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Toshiba Semiconductor and Storage TK20A25D,S5Q(M	MOSFET (Metal Oxide)	150 °C	100 mOhm	TO-220SIS	Through Hole	45 W	2550 pF	TO-220-3 Full Pack	55 nC	250 V	3.5 V	20 V	20 A	10 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 20A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources