Beta
⌘K
MOSFET N-CH 250V 20A TO220SIS
| Part | Technology | Operating Temperature | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 150 °C | 100 mOhm | TO-220SIS | Through Hole | 45 W | 2550 pF | TO-220-3 Full Pack | 55 nC | 250 V | 3.5 V | 20 V | 20 A | 10 V | N-Channel |