GBU8G

Active

GeneSiC Semiconductor

BRIDGE RECT 1PHASE 400V 8A GBU

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

BRIDGE RECT 1PHASE 400V 8A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU8G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	400 V

Part	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Average Rectified (Io)	Diode Type	Current - Reverse Leakage @ Vr	Package / Case	Technology
GeneSiC Semiconductor GBU8G	Through Hole	GBU	1.1 V	400 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8J	Through Hole	GBU	1.1 V	600 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8K	Through Hole	GBU	1.1 V	800 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8B	Through Hole	GBU	1.1 V	100 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8A	Through Hole	GBU	1.1 V	50 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 400 V Through Hole GBU

Technical documentation and resources