GBU8J

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 8A GBU

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 8A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU8J

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Average Rectified (Io)	Diode Type	Current - Reverse Leakage @ Vr	Package / Case	Technology
GeneSiC Semiconductor GBU8G	Through Hole	GBU	1.1 V	400 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8J	Through Hole	GBU	1.1 V	600 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8K	Through Hole	GBU	1.1 V	800 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8B	Through Hole	GBU	1.1 V	100 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard
GeneSiC Semiconductor GBU8A	Through Hole	GBU	1.1 V	50 V	-55 °C	150 °C	8 A	Single Phase	5 µA	4-SIP GBU	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBU

Technical documentation and resources