1N8030-GA

Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 0.75A 3-PIN(3+TAB) TO-257 ISOLATED

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Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 0.75A 3-PIN(3+TAB) TO-257 ISOLATED

Technical Specifications

Parameters and characteristics for this part

Specification	1N8030-GA

Capacitance @ Vr, F	76 pF
Current - Average Rectified (Io)	750 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	250 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-257-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-257
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.39 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package
GeneSiC Semiconductor 1N8030-GA	-55 °C	250 °C	No Recovery Time	SiC (Silicon Carbide) Schottky	1.39 V	650 V	76 pF	Through Hole	5 µA	750 mA	0 ns	TO-257-3	TO-257

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 750mA Through Hole TO-257

Technical documentation and resources