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DIODE SCHOTTKY 650V 0.75A 3-PIN(3+TAB) TO-257 ISOLATED
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Technology | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Mounting Type | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | -55 °C | 250 °C | No Recovery Time | SiC (Silicon Carbide) Schottky | 1.39 V | 650 V | 76 pF | Through Hole | 5 µA | 750 mA | 0 ns | TO-257-3 | TO-257 |