2N4401_D11Z

Obsolete

ON Semiconductor

TRANS NPN 40V 0.6A TO92-3

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2N4401_D11Z

Obsolete

ON Semiconductor

TRANS NPN 40V 0.6A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N4401_D11Z

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

2N4401(LEGACY%20FAIRCHILD) Series

NPN Bipolar Junction Transistor, TO-92

Part	Package / Case	Transistor Type	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Supplier Device Package
ON Semiconductor 2N4401TA	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401RLRM	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401RLRA
ON Semiconductor 2N4401TFR	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401G	TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401_J05Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401RLRMG	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401_J18Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401_D11Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401_S00Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N4401(LEGACY%20FAIRCHILD) Series

The NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources