2N4401(LEGACY%20FAIRCHILD) Series

NPN Bipolar Junction Transistor, TO-92

Catalog

NPN Bipolar Junction Transistor, TO-92

Part	Package / Case	Transistor Type	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Supplier Device Package
ON Semiconductor 2N4401TA	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401RLRM	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401RLRA
ON Semiconductor 2N4401TFR	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401G	TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401_J05Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401RLRMG	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92	TO-226
ON Semiconductor 2N4401_J18Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401_D11Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3
ON Semiconductor 2N4401_S00Z	TO-226-3 TO-92-3	NPN	625 mW	Through Hole	-55 °C	150 °C	750 mV	40 V	600 mA	250 MHz	100	TO-92-3

Catalog

NPN Bipolar Junction Transistor, TO-92

Key Features

• Pb-Free Packages are Available*

Description

The NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.