TK32E12N1,S1X

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Toshiba Semiconductor and Storage

MOSFET N CH 120V 60A TO-220

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Toshiba Semiconductor and Storage

MOSFET N CH 120V 60A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	TK32E12N1,S1X

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	98 W
Rds On (Max) @ Id, Vgs	13.8 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TK32E12N1,S1X	TO-220-3	Through Hole	N-Channel	98 W	10 V	20 V	120 V	13.8 mOhm	4 V	MOSFET (Metal Oxide)	150 °C	34 nC	TO-220	2000 pF	60 A

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General part information

N-Channel 120 V 60A (Tc) 98W (Tc) Through Hole TO-220

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