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MOSFET N CH 120V 60A TO-220
| Part | Package / Case | Mounting Type | FET Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220-3 | Through Hole | N-Channel | 98 W | 10 V | 20 V | 120 V | 13.8 mOhm | 4 V | MOSFET (Metal Oxide) | 150 °C | 34 nC | TO-220 | 2000 pF | 60 A |