IS66WV51216EALL-70BLI
ActiveISSI, Integrated Silicon Solution Inc
8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,1.7V-1.95V,48 BALL BGA (6X8MM), ROHS
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IS66WV51216EALL-70BLI
ActiveISSI, Integrated Silicon Solution Inc
8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,1.7V-1.95V,48 BALL BGA (6X8MM), ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS66WV51216EALL-70BLI |
|---|---|
| Access Time | 70 ns |
| Memory Format | PSRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 1024 KB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | PSRAM (Pseudo SRAM) |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS66WV51216 Series
PSRAM (Pseudo SRAM) Memory IC 8Mbit Parallel 70 ns 48-TFBGA (6x8)
Documents
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