
IS66WV51216EBLL-70BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,2.5V-3.6V,48 BALL BGA (6X8MM), ROHS
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IS66WV51216EBLL-70BLI-TR
ActiveISSI, Integrated Silicon Solution Inc
8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,2.5V-3.6V,48 BALL BGA (6X8MM), ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS66WV51216EBLL-70BLI-TR |
|---|---|
| Access Time | 70 ns |
| Memory Format | PSRAM |
| Memory Interface | Parallel |
| Memory Organization | 512 K |
| Memory Size | 1024 KB |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | PSRAM (Pseudo SRAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS66WV51216 Series
High-Speed access time : - 60ns (IS66/67WV51216EBLL )
CMOS Lower Power Operation
Single Power Supply: Vdd =2.5V to 3.6V
Documents
Technical documentation and resources
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