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IS66WV51216EBLL-70BLI-TR - IS66WV51216EBLL-70BLI-TR

IS66WV51216EBLL-70BLI-TR

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ISSI, Integrated Silicon Solution Inc

8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,2.5V-3.6V,48 BALL BGA (6X8MM), ROHS

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IS66WV51216EBLL-70BLI-TR - IS66WV51216EBLL-70BLI-TR

IS66WV51216EBLL-70BLI-TR

Active
ISSI, Integrated Silicon Solution Inc

8MB,PSEUDO SRAM,ASYNC,512K X 16,70NS,2.5V-3.6V,48 BALL BGA (6X8MM), ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIS66WV51216EBLL-70BLI-TR
Access Time70 ns
Memory FormatPSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size1024 KB
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
TechnologyPSRAM (Pseudo SRAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 2.40
NewarkEach (Supplied on Full Reel) 1$ 2.44
3000$ 2.33
6000$ 2.17
12000$ 2.02
18000$ 1.94
30000$ 1.91

Description

General part information

IS66WV51216 Series

High-Speed access time : - 60ns (IS66/67WV51216EBLL )

CMOS Lower Power Operation

Single Power Supply: Vdd =2.5V to 3.6V

Documents

Technical documentation and resources

No documents available