2N5886G

Obsolete

ON Semiconductor

TRANS GP BJT NPN 80V 25A 200000MW 3-PIN(2+TAB) TO-3 TRAY

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Obsolete

ON Semiconductor

TRANS GP BJT NPN 80V 25A 200000MW 3-PIN(2+TAB) TO-3 TRAY

Technical Specifications

Parameters and characteristics for this part

Specification	2N5886G

Current - Collector (Ic) (Max) [Max]	25 A
Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20 hFE
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	200 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

25 A, 80 V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Transistor Type	Frequency - Transition	Supplier Device Package	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max)	Power - Max [Max]
ON Semiconductor 2N5886G	20 hFE	25 A	Through Hole	4 V	TO-204AA TO-3	NPN	4 MHz	TO-204	TO-3	80 V	2 mA	200 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.