2N5886 Series

25 A, 80 V NPN Bipolar Power Transistor

Catalog

25 A, 80 V NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Transistor Type	Frequency - Transition	Supplier Device Package	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max)	Power - Max [Max]
ON Semiconductor 2N5886G	20 hFE	25 A	Through Hole	4 V	TO-204AA TO-3	NPN	4 MHz	TO-204	TO-3	80 V	2 mA	200 W

25 A, 80 V NPN Bipolar Power Transistor

• Low Collector-Emitter Saturation VoltageVCE(sat)= 1.0 Vdc, (max) at IC= 15 Adc

• Low Leakage CurrentICEX= 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current GainhFE= 20 (min) at IC= 10 Adc

• High Current Gain Bandwidth Productft= 4.0 MHz (min) at IC= 1.0 Adc

• Pb-Free Packages are Available

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.