
VS-30ETH06FP-N3
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 600V 30A TO220-2FP
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VS-30ETH06FP-N3
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 600V 30A TO220-2FP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-30ETH06FP-N3 |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-220-2 Full Pack |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-220-2 Full Pack |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 2.56 | |
Description
General part information
30ETH06 Series
Diode 600 V 30A Through Hole TO-220-2 Full Pack
Documents
Technical documentation and resources