VS-30ETH06-M3

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO220AC

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsIRLZ44 Datasheet

VS-30ETH06-M3

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO220AC

Deep-Dive with AI

DocumentsIRLZ44 Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30ETH06-M3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.6 V

30ETH06 Series

Part	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Grade	Qualification	Speed
Vishay General Semiconductor - Diodes Division VS-30ETH06STRL-M3	Surface Mount	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	35 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06-N-S1
Vishay General Semiconductor - Diodes Division 30ETH06	Through Hole	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	TO-220-2	TO-220AC	35 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06PBF	Through Hole	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	TO-220-2	TO-220AC	35 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06STRLPBF	Surface Mount	Standard	150 °C	-40 °C	30 A	2.6 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	28 ns	600 V	50 µA	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division VS-30ETH06-1PBF	Through Hole	Standard			30 A	2.6 V	200 mA 500 ns	I2PAK TO-262-3 Long Leads TO-262AA	TO-262-3	35 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06-M3	Through Hole	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	TO-220-2	TO-220AC	35 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06-N3	Through Hole	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	TO-220-2	TO-220AC	31 ns	600 V	50 µA
Vishay General Semiconductor - Diodes Division VS-30ETH06FP-N3	Through Hole	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA	TO-220-2 Full Pack	TO-220-2 Full Pack		600 V	50 µA			Standard Recovery >500ns
Vishay General Semiconductor - Diodes Division VS-30ETH06STRR-M3	Surface Mount	Standard	175 ░C	-65 C	30 A	2.6 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	35 ns	600 V	50 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.51
		50	$ 1.22
		100	$ 0.96
		500	$ 0.82
		1000	$ 0.67
		2000	$ 0.63
		5000	$ 0.60
		10000	$ 0.57

Description

General part information

30ETH06 Series

Diode 600 V 30A Through Hole TO-220AC

Documents

Technical documentation and resources

IRLZ44

Datasheet