IVCR2401DPR

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Inventchip

LOW EDGE 2 4A 6NS 6NS 8V~20V 4A SOIC-8-EP GATE DRIVERS ROHS

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Inventchip

LOW EDGE 2 4A 6NS 6NS 8V~20V 4A SOIC-8-EP GATE DRIVERS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	IVCR2401DPR

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	4 A
Current - Peak Output (Source, Sink) [custom]	4 A
Driven Configuration	Low-Side
Gate Type	N-Channel, P-Channel MOSFET
Input Type	Non-Inverting
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	13 ns
Rise / Fall Time (Typ) [custom]	13 ns
Supplier Device Package	8-SOIC-EP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	8 V

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Input Type	Mounting Type	Driven Configuration	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Package / Case
Inventchip IVCR2401DPR	4 A	4 A	8-SOIC-EP	Non-Inverting	Surface Mount	Low-Side	N-Channel P-Channel MOSFET	13 ns	13 ns	2	8 V	20 V	Independent	-40 °C	125 °C	0.154 in	8-SOIC	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low-Side Gate Driver IC Non-Inverting 8-SOIC-EP

Technical documentation and resources

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