PJT7413_S2_00001

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7413_S2_00001

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	522 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)
Panjit International Inc. PJT7413_S2_00001	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	1.5 V 4.5 V	P-Channel	Surface Mount	SOT-363	2.5 A	522 pF	7 nC	85 mOhm	12 V	1.2 V	6-TSSOP SC-88 SOT-363	750 mW
Panjit International Inc. PJT7413_S1_00001	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	1.5 V 4.5 V	P-Channel	Surface Mount	SOT-363	2.5 A	522 pF	7 nC	85 mOhm	12 V	1.2 V	6-TSSOP SC-88 SOT-363	750 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-363

Technical documentation and resources

No documents available