20V P-CHANNEL ENHANCEMENT MODE M
| Part | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | 1.5 V 4.5 V | P-Channel | Surface Mount | SOT-363 | 2.5 A | 522 pF | 7 nC | 85 mOhm | 12 V | 1.2 V | 6-TSSOP SC-88 SOT-363 | 750 mW |
Panjit International Inc. | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | 1.5 V 4.5 V | P-Channel | Surface Mount | SOT-363 | 2.5 A | 522 pF | 7 nC | 85 mOhm | 12 V | 1.2 V | 6-TSSOP SC-88 SOT-363 | 750 mW |