SCT2280KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 14 A, 1.2 KV, 0.28 OHM, TO-247N
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SCT2280KEHRC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 14 A, 1.2 KV, 0.28 OHM, TO-247N
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT2280KEHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 36 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 108 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 364 mOhm |
| Supplier Device Package | TO-247N |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
SCT2280KEHR Series
This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.
Documents
Technical documentation and resources