SCT2280KEHR Series

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Part	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Qualification	Grade
Rohm Semiconductor SCT2280KEGC11	175 °C	364 mOhm	4 V	TO-247-3	-6 V	22 V	TO-247N	1200 V	36 nC	14 A	Through Hole	18 V	667 pF	N-Channel	108 W
Rohm Semiconductor SCT2280KEHRC11	175 °C	364 mOhm	4 V	TO-247-3	-6 V	22 V	TO-247N	1200 V	36 nC	14 A	Through Hole	18 V	667 pF	N-Channel	108 W	AEC-Q101	Automotive

Catalog

1200V, 14A, THD, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant, Qualified to AEC-Q101

Description

This is SiC (Silicon Carbide) planar MOSFET. This product have high voltage resistance, low ON resistance, and fast switching speed features. AEC-Q101 qualified automotive grade product.