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71V3578S133PFGI8 - 71V3578 - Block Diagram

71V3578S133PFGI8

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

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71V3578S133PFGI8 - 71V3578 - Block Diagram

71V3578S133PFGI8

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification71V3578S133PFGI8
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 18
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP (14x14)
TechnologySRAM - Synchronous, SDR
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V3578 Series

The 71V3578 3.3V CMOS SRAM is organized as 256K x 18. The 71V3578 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources