
71V3578S150PFGI8
ObsoleteRenesas Electronics Corporation
3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O
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71V3578S150PFGI8
ObsoleteRenesas Electronics Corporation
3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 71V3578S150PFGI8 |
|---|---|
| Access Time | 3.8 ns |
| Clock Frequency | 150 MHz |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 256K x 18 |
| Memory Size | 4.5 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x14) |
| Technology | SRAM - Synchronous, SDR |
| Voltage - Supply [Max] | 3.465 V |
| Voltage - Supply [Min] | 3.135 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
71V3578 Series
The 71V3578 3.3V CMOS SRAM is organized as 256K x 18. The 71V3578 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Documents
Technical documentation and resources