BAS16HMFHT116

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Rohm Semiconductor

DIODE GEN PURP 80V 215MA SSD3

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Rohm Semiconductor

DIODE GEN PURP 80V 215MA SSD3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS16HMFHT116

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	500 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	SSD3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Grade	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Operating Temperature - Junction	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
Rohm Semiconductor BAS16HMFHT116	Automotive	2 pF	SSD3	4 ns	Standard	80 V	Surface Mount	500 nA	215 mA	AEC-Q101	150 °C	SC-59 SOT-23-3 TO-236-3	200 mA 500 ns	1.25 V
Rohm Semiconductor BAS16T116		3.5 pF	SSD3	4 ns	Standard	80 V	Surface Mount	100 nA	100 mA		150 ¯C	SC-59 SOT-23-3 TO-236-3	200 mA		Any Speed

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 215mA Surface Mount SSD3

Technical documentation and resources

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